MRF9045LR1 MRF9045LSR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1 10 1000
130.1
14
15
16
17
18
19
20
10
20
30
40
50
60
70
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
G
ps
, POWER GAIN (dB)
930
20
Figure 3. Class AB Broadband Circuit Performance
16
13
12
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus
Output Power
17
15
14
19
18
935 940 945 950 955 960
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain, Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
IMD, INTERMODULATIO
N DISTORTION (dBc)
, DRAIN EFFICIENCY (%)
η
-- 3 8
-- 3 6
-- 3 4
-- 3 2
-- 3 0
40
45
50
55
-- 1 2
-- 1 6
-- 1 4
, DRAIN
η
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
Gps
η
IMD
IRL
Gps
η
VDD
=28Vdc
IDQ
= 350 mA
f1 = 945 MHz
G
ps
, POWER GAIN (dB)
VDD
=28Vdc
Pout
= 45 W (PEP)
IDQ
= 350 mA
Two--Tone Measurement,
100 kHz Tone Spacing
IMD, INTERMODULATIO
N DISTORTION (dBc)
1 10 100
400 mA
IDQ
= 525 mA
VDD
=28Vdc
f1 = 945 MHz
350 mA
300 mA
16.50.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
-- 7 0
0.5 1 10 100
-- 6 0
-- 5 0
-- 4 0
-- 3 0
-- 2 0
-- 1 0
400 mA
IDQ
= 300 mA
525 mA
350 mA
VDD
=28Vdc
IDQ
= 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
3rd Order
5th Order
7th Order
-- 9 00.5 1 10 100
-- 8 0
-- 6 0
-- 5 0
-- 4 0
-- 3 0
-- 1 0
-- 7 0
-- 2 0
VDD
=28Vdc
f1 = 945 MHz
f2 = 945.1 MHz
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数
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MRF9045NBR1 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR